FORMATION OF BURIED TERNARY SILICIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS (IBS)

FORMATION OF BURIED TERNARY SILICIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS (IBS)

著者名:

Panknin, D.

掲載資料名:

Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

279

発行年:

1993

開始ページ:

111

終了ページ:

116

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991743 [1558991743]

言語:

英語

請求記号:

M23500/279

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015763
シリーズID:	PA00000011
会議名:	Symposium on beam-solid interactions
回次:	1992
会議開催地:	Boston, MA, USA
会議開催年:	1992.11.30-1992.12.04

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