HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS
- 著者名:
Pearton, S. J. Chakrabarti, U. K. Katz, A. Ren, F. Fullowan, T. R. Abernathy, C R. Hobson, W. S. - 掲載資料名:
- Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 268
- 発行年:
- 1992
- 開始ページ:
- 17
- 終了ページ:
- 22
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, PA: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991637 [1558991638]
- 言語:
- 英語
- 請求記号:
- M23500/268
- 資料種別:
- 国際会議録
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Materials Research Society |
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11
国際会議録
REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |