HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS

HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS

著者名:

Pearton, S. J.

掲載資料名:

Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

268

発行年:

1992

開始ページ:

17

終了ページ:

22

総ページ数:

6

出版情報:

Pittsburgh, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558991637 [1558991638]

言語:

英語

請求記号:

M23500/268

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015752
シリーズID:	PA00000011
会議名:	Symposium on materials modification by energetic atoms and ions
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.28-1992.04.30

類似資料:

1 国際会議録 IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS Pearton, S.J., Chakrabarti, U.K., Katz, A., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R. Materials Research Society	7 国際会議録 COMPARISON OF MULTIPOLAR RESONANT-CAVITY AND MAGNETIC MIRROR MICROWAVE ECR SOURCES FOR DRY ETCHING OF III-V SEMICONDUCTORS Pearton, S. J., Abernathy, C. R., Ren, F. MRS - Materials Research Society
2 国際会議録 NEW DRY-ETCH CHEMISTRIES FOR III-V SEMICONDUCTORS Pearton, S. J., Chakrabarti, U. K., Ren, F., Abernathy, C. R., Katz, A., Hobson, W. S., Constantine, C. MRS - Materials Research Society	8 国際会議録 *SELF-ALIGNED, METAL-MASKED DRY ETCH PROCESSING OF III-V ELECTRONIC AND PHOTONIC DEVICES Pearton, S. J., Katz, A., Feingold A, Ren, F., Fullowan, T. R., Lothian, J. R, Abernathy, C. R. Materials Research Society
3 国際会議録 Cl2-Based ECR Etching of InGaP, AlInP and AlGaP Hong, J., Lee, J. W., Pearton, S. J., Santana, C., Abernathy, C. R., Hobson, W. S., Ren, F. MRS - Materials Research Society	9 国際会議録 Dry Etching of InGaP and AlInP in CH4/H2/Ar Lee, J. W., Pearton, S. J., Santana, C. J., Lambers, E. S., Abernathy, C. R., Hobson, W. S., Ren, F. MRS - Materials Research Society
4 国際会議録 High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar Lee, J.W., Pearton, S.J., Lambers, E.S., Mileham, J.R., Abernathy, C.R., Hobson, W.S., Ren, F., Shul, R.J. Electrochemical Society	10 国際会議録 REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2 Ren, F., Pearton, S.J., Lothian, J.R., Abernathy, C.R., Hobson, W.S. Materials Research Society
5 国際会議録 Fabrication of Novel III-N and III-V Modulator Structures by ECR Plasma Etching Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Mileham, J. R., Shul, R. J., Kilcoyne, S. P., Hagerott-Crawford, M., … MRS - Materials Research Society	11 国際会議録 REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES Pearton, S.J., Chakrabarti, U.K., Baiocchi, F.A., Hobson, W.S. Materials Research Society
6 国際会議録 DRY SURFACE CLEANING OF PLASMA-ETCHED HEMTs Pearton, S.J., Ren, F., Katz, A., Chakrabarti, U.K., Lane, E., Hobson, W.S., Kopf, R.F., Abernathy, C.R., Wu, C.S., … Materials Research Society	12 国際会議録 High-Rate ECR Plasma Etching of Cu at Room Temperature in Cl2/Ar Jung, K-B., Lee, J. W., Park, Y. D., Childress, J. R., Pearton, S. J., Ren, F. MRS - Materials Research Society

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