STRAIN RELIEF IN InXGa1-XAs/GaAs MULTIPLE LAYER SYSTEMS

STRAIN RELIEF IN InXGa1-XAs/GaAs MULTIPLE LAYER SYSTEMS

著者名:

掲載資料名:

Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

263

発行年:

1992

開始ページ:

439

終了ページ:

444

総ページ数:

6

出版情報:

Pittsburgh, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558991583 [1558991581]

言語:

英語

請求記号:

M23500/263

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015747
シリーズID:	PA00000011
会議名:	Symposium on mechanisms of heteroepitaxial growth
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.27-1992.04.30

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