MODELINF OF SILICON DEPOSITION YIELD AT LOW TEMPERATURE BY ArF EXCIMER LASER PHOTOLYSIS OF DISILANE

MODELINF OF SILICON DEPOSITION YIELD AT LOW TEMPERATURE BY ArF EXCIMER LASER PHOTOLYSIS OF DISILANE

著者名:

Fowler, B.

掲載資料名:

Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

263

発行年:

1992

開始ページ:

203

終了ページ:

208

総ページ数:

6

出版情報:

Pittsburgh, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558991583 [1558991581]

言語:

英語

請求記号:

M23500/263

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015747
シリーズID:	PA00000011
会議名:	Symposium on mechanisms of heteroepitaxial growth
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.27-1992.04.30

類似資料:

1 国際会議録 ArF EXCIMER LASER-ENHANCED PHOTOCHEMICAL VAPOR DEPOSITION OF HOMOEPITAXIAL SILICON FROM DISILANE Fowler, B., Lian, S., Krishnan, S., Jung, L., Banerjee, S. Materials Research Society	7 国際会議録 Low Temperature Selective Silicon Epitaxy by Ultra-High Vacuum Rapid Thermal Chemical Vapor Deposition Using Disilane, Hydrogen and Chlorine Violette, K.E., O'Neil, P.A., Ozturk, M.C., Christensen, K., Maher, D.M. Electrochemical Society
2 国際会議録 SILICON HOMOEPITAXY AT 300°C USING ArF EXCIMER LASER PHOTOLYSIS OF DISILANE Fowler, B., Lian, T., Bullock, D., Banerjee, S. Materials Research Society	8 国際会議録 HYDROGENATED AMORPHOUS SILICON FILMS BY THE PYROLYSIS OF DISILANE Chu, T.L., Chu, S.S., Ang, S.T., Lo, D.H., Duong, A., Hwaung, C.G., Book, L. Materials Research Society
3 国際会議録 SURFACE PREPARATION USING ANHYDROUS FLUORIDE AND AQUEOUS H2O PRIOR TO LOW TEMPERATURE EPITAXIAL SILICON DEPOSITION Frystak, D.C., Wise, R., Grothe, P., Barnett, J., Fowler, B., Carpio, R. Electrochemical Society	9 国際会議録 Investigation of Single-Wafer, Low Temperature Epitaxial Silicon Deposition with Clustered HF Pre- Clean Wise, R., Frystak, D., Barnett, J., Grothe, P., Fowler, B., Forest, E. Electrochemical Society
4 国際会議録 LOW TEMPERATURE CRYSTALLIZATION OF AMORPHOUS SILICON FILMS USING AN EXCIMER LASER Ready, S. E., Boyce, J. B., Bachrach, R. Z., Johnson, R. I., Winer, K., Anderson, G., Tsai, C. C. Materials Research Society	10 国際会議録 Performance analysis of ArF excimer laser lithography optics Lee,K.H., Kim,D.H., Kim,J.S., Chung,H.B., Yoo,H.J. SPIE-The International Society for Optical Engineering
5 国際会議録 LOW TEMPERATURE TUNGSTEN DEPOSITION BY ArF-LASER INDUCED PHOTO-CVD Krans, Rutger L., Berntsen, Arjan, Sinke, Wim C. Materials Research Society	11 国際会議録 Crystallization of 500-nm-thick a-SiGe:H films through ArF-excimer laser radiation Chiussi, S., Fabbri, F., Fornarini, L., Gonzalez, P., Leon, B., Martelli, S., Lopez, E., Serra, C., Serra, J. SPIE-The International Society for Optical Engineering
6 国際会議録 New hot-carrier-resistant P-I-N MOSFET structure L. Jung, I. Manna, S. Bhattacharya, S.K. Banerjee Society of Photo-optical Instrumentation Engineers	12 国際会議録 Electrical Hysteresis Behavior of Low Temperature Polycrystalline Silicon Thin Film Transistors D. Nam, H. Lee, S. Jung, T. Ahn, C. Kim Electrochemical Society

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