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EFFECTS OF SILICON ION IMPLANTATION UPON THIN GATE OXIDE INTEGRITY

著者名:
Lee, G.-S.
Park, J. -G.
Choi, S. -P.
Shin, C.-H,
Sun, Y.-B
Kwak, Y.-S.
Shin, C.-K.
Smith, W. L.
Hahn, S.
さらに 4 件
掲載資料名:
Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
262
発行年:
1992
開始ページ:
1043
終了ページ:
1048
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991576 [1558991573]
言語:
英語
請求記号:
M23500/262
資料種別:
国際会議録

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