SIMILARITY OF VACANCY CREATION MECHANISMS IN Si DOPED GaAs AND Ga DOPED ZnSe OBSERVED BY A MONOENERGETIC POSITRON BEAM

SIMILARITY OF VACANCY CREATION MECHANISMS IN Si DOPED GaAs AND Ga DOPED ZnSe OBSERVED BY A MONOENERGETIC POSITRON BEAM

著者名:

Tanigawa, S.

掲載資料名:

Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

262

発行年:

1992

開始ページ:

597

終了ページ:

602

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991576 [1558991573]

言語:

英語

請求記号:

M23500/262

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015746
シリーズID:	PA00000011
会議名:	Symposium on defect engineering in semiconductor growth, processing and device technology
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.26-1992.05.01

類似資料:

1 国際会議録 Study of Point Defects in Impurity-Doped ZnSe by a Monoenergetic Positron Beam Miyajima,T., Wei,L., Tanigawa,S., Okuyama,H., Akimoto,K., Mori,Y. Trans Tech Publications	7 国際会議録 Study of Interfacial Reactions in W/Si Systems by a Monoenergetic Positron Beam Tabuki,Y., Wei,L., Tanigawa,S., Hinode,K., Kobayashi,N., Onai,T., Owada,N. Trans Tech Publications
2 国際会議録 Origin of the Carrier Reduction by Annealing in n-Type ZnSe Miyajima,T., Okuyama,H., Akimoto,K., Wei,L., Tanigawa,S. Trans Tech Publications	8 国際会議録 THE INTERFACIAL REACTIONS IN Ti/Si AND Ni/Si SYSTEMS OBSERVED BY A MONOENERGETIC POSITRON BEAM Tanigawa, S., Wei, Long, Tabuki, Yasushi Materials Research Society
3 国際会議録 Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons Wei,L., Lee,J.L., Tanigawa,S., Kawabe,M. Trans Tech Publications	9 国際会議録 Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation Uedono,A., Wei,L., Tabuki,Y., Kondo,H., Tanigawa,S., Wada,K., Nakanishi,H. Trans Tech Publications
4 国際会議録 Vacancy-Type Defects in Si+-and B+-Implanted Si Probed by a Monoenergetic Positron Beam Uedono,A., Wei,L., Tabuki,Y., Kondo,H., Tanigawa,S., Sugiura,J., Ogasawara,M. Trans Tech Publications	10 国際会議録 DEFECTS INTRODUCED BY LOW DOSE Be-IMPLANTATION PROBED BY A MONOENERGETIC POSITRON BEAM Uedono, A., Ujihira, Y., Wei, L., Tabuki, Yasushi, Tanigawa, Shoichiro, Wada, K, Nakanishi, H. Materials Research Society
5 国際会議録 CHARACTERIZATION OF DEFECTS IN HEAVILY Si-DOPED GaAs BY A MONOENERGETIC POSITRON BEAM Uedono, A., Ujihira, Y., Wei, L., Tanigawa, S. Materials Research Society	11 国際会議録 DEFECT FORMATION BY ION IMPLANTATION IN Cz-Si STUDIED BY A MONOENERGETIC POSITRON BEAM Uedeno, A., Ujihira, Y., Wei, L., Tabuki, Y, Tanigawa, S., Sugiura, J., Ogasawara, M., Tamura, M, Materials Research Society
6 国際会議録 Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine Chichibu,S., Iwai,A., Nakahara,Y., Matsumoto,S., Higuchi,H., Wei,L., Tanigawa,S. Trans Tech Publications	12 国際会議録 EVALUATION OF VACANCY-TYPE DEFECTS IN SIMOX SUBSTRATES BY A SLOW POSITION BEAM AND A PULSED POSITRON BEAM Kametani, H., Akiyama, H., Yamaguchi, Y., Koumaru, M,, Wei, L., Tabuki, Y., Tanigawa, S., Uedono, A., Watauchi, S., … Materials Research Society

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