PLASMA HYDROGENATION STUDIES ON LOW-TEMPERATURE MBE-GROWN GaAs

PLASMA HYDROGENATION STUDIES ON LOW-TEMPERATURE MBE-GROWN GaAs

著者名:

掲載資料名:

Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

262

発行年:

1992

開始ページ:

437

終了ページ:

442

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991576 [1558991573]

言語:

英語

請求記号:

M23500/262

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015746
シリーズID:	PA00000011
会議名:	Symposium on defect engineering in semiconductor growth, processing and device technology
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.26-1992.05.01

類似資料:

1 国際会議録 LOW-TEMPERATURE PHOTOLUMINESCENCE OF MOVCVD GaAs GROWN DIRECTLY ON Si Wilson, B. A., Bonner, C. E., Harris, T. D., Lamont, M. G., Miller, R. C, Sputz, S. K., Vermon, S. M., Haven, V. E., … Materials Research Society	7 国際会議録 PHOTOELECTRONIC PROPERTIES OF LOW TEMPERATURE GaAs GROWN ON SILICON AND GaAs SUBSTRATES BY MBE Mariella, Raymond P., Morse, Jeffrey D., Aines, Roger, Hung, Charles E. Materials Research Society
2 国際会議録 HRXRD STUDY OF THE STRAIN PROPERTIES OF MBE-GROWN ZnSe AND ZnSTe ON GaAs Sou, I. K., Mou, S. M., Chan, Y. W., Xu, G. C., Wong, G. K. L. MRS - Materials Research Society	8 国際会議録 MBE-grown 1.3 micron InGaAsN/GaAs double QW VCSELs with very low-threshold current density under room temperature CW operation Lai, C.-M., Wang, J.-S., Hsiao, R.-S., Wei, L.-C., Lin, G., Lin, K.-F., Liu, H.-Y., Kovsh, A.R., Maleev, N.N., Livshits, … SPIE - The International Society of Optical Engineering
3 国際会議録 EFFECTS OF LOW-TEMPERATURE SURFACE CLEANING USING ECR HYDROGEN PLASMA Nam, C. W., Ashok, S., Tsai, W., Day, M. E. MRS - Materials Research Society	9 国際会議録 A SCANNING TUNNELING MICROSCOPY STUDY OF MBE-GROWN GaAs(001)-FACETED SURFACES Maboudian, R., Bressler-Hill, V., Wang, X.-S., Pond, K., Petroff, P.M., Weinberg, W.H. Materials Research Society
4 国際会議録 MOLECULAR BEAM EPITAXY OF LOW TEMPERATURE GROWN GaAs PHOTOCONDUCTORS Dykaar, D.R., Eaglesham, D.J., Keil, U.D., Greene, B.I., Saeta, P.N., Pfeiffer, L.N., Kopf, R.F., Darack, S.B., West, … Materials Research Society	10 国際会議録 MBE GROWTH OF GaAs ON POROUS SILICON Lin, T. L., Sadwick, L., Wang., K. L., Rhee, S. S., Kao, Y. C., Hull, R, Nieh, C. W., Jamieson, D. N., Liu, J. K., … Materials Research Society
5 国際会議録 OPTICALLY DETECTED MAGNETIC RESONANCE OF ARSENIC ANTISITIES IN GaAs MBE LAYERS GROWN AT LOW TEMPERATURES Rong, F.C., Fotiadis, L., Sun, H.-J., Watkins, G.D., Taysing-Lara, M.A., Flemish, J., Chang, W.H. Materials Research Society	11 国際会議録 LOW-TEMPERATURE DEFECT-INDUCED AGING OF GaAs GROWN BY MOLECULAR BEAM EPITAXY Szafranek, I., Stockman, S. A., Szafranek, M., McCollum, M. J., Plano, M. A., Miller, W. R., Stillman, G. E. Materials Research Society
6 国際会議録 ANNEALING CHARACTERISTICS OF LOW TEMPERATURE GROWN GaAs:Be Bliss, D.E., Walukiewicz, W., Chan, K.T., Ager, III., J.W., Tanigawa, S., Haller, E.E. Materials Research Society	12 国際会議録 TEM STUDY OF THE STRUCTURE OF MBE GaAs LAYERS GROWN AT LOW TEMPERATURE Liliental-Weber, Zuzanna Materials Research Society

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