POSITRON ANNIHILATION AND ELECTRON RESONANCE OF ELECTRON-IRRADIATED 3C-SiC

POSITRON ANNIHILATION AND ELECTRON RESONANCE OF ELECTRON-IRRADIATED 3C-SiC

著者名:

Itoh, Hisayoshi

掲載資料名:

Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

262

発行年:

1992

開始ページ:

331

終了ページ:

336

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991576 [1558991573]

言語:

英語

請求記号:

M23500/262

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015746
シリーズID:	PA00000011
会議名:	Symposium on defect engineering in semiconductor growth, processing and device technology
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.26-1992.05.01

類似資料:

1 国際会議録 Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positron Itoh,H., Yoshikawa,M., Nashiyama,I., Wei,L., Tanigawa,S., Misawa,S., Okumura,H., Yoshida,S. Trans Tech Publications	7 国際会議録 Structural Defects at SiO2/SiC Interfaces Detected by Positron Annihilation Maekawa, M., Kawasuso, A., Yoshikawa, M., Itoh, H. Trans Tech Publications
2 国際会議録 Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation Ohshima,T., Uedono,A., Itoh,H., Abe,K., Suzuki,R., Ohdaira,T., Aoki,Y., Yoshikawa,M., Mikado,T., Okumura,H., Yoshida,S., … Trans Tech Publications	8 国際会議録 Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron … Kerbiriou, X., Barthe, M.F., Esnouf, S., Desgardin, P., Blondiaux, G., Petite, G. Trans Tech Publications
3 国際会議録 EFFECTS OF GAMMA-RAY IRRADIATION AND THERMAL ANNEALING ON CHARACTERISTICS OF 3C-SiC MOS STRUCTURE Yoshikawa, M., Morita, Y., Itoh, H., Nashiyama, I., Okumura, H., Misawa, S., Yoshida, S. Materials Research Society	9 国際会議録 Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance Kawasuso,A., Itoh,H., Cha,D., Okada,S. Trans Tech Publications
4 国際会議録 Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays Yoshikawa,M., Saitoh,K., Ohshima,T., Itoh,H., Nashiyama,I., Takahashi,Y., Ohnishi,K., Okumura,H., Yoshida,S. Trans Tech Publications	10 国際会議録 Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions Ohshima, T., Uedono, A., Itoh, H., Yoshikawa, M., Kojima, K., Okada, S., Nashiyama, I., Abe, K., Tanigawa, S., Frank, … Trans Tech Publications
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6 国際会議録 ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons Cha,D., Itoh,H., Morishita,N., Kawasuso,A., Ohshima,T., Watanabe,Y., Ko,J., Lee,K., Nashiyama,I. Trans Tech Publications	12 国際会議録 Defects in Electron or Proton Irradiated Undoped and Si-Doped GaAs by Positron Annihilation Itoh,Y., Murakami,H., Suzuki,T. Trans Tech Publications

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