NUCLEATION OF OXYGEN PRECIPITATES IN A QUENCHED CZOCHRALSKI SILICON CRYSTAL

NUCLEATION OF OXYGEN PRECIPITATES IN A QUENCHED CZOCHRALSKI SILICON CRYSTAL

著者名:

掲載資料名:

Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

262

発行年:

1992

開始ページ:

69

終了ページ:

74

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991576 [1558991573]

言語:

英語

請求記号:

M23500/262

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015746
シリーズID:	PA00000011
会議名:	Symposium on defect engineering in semiconductor growth, processing and device technology
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.26-1992.05.01

類似資料:

1 国際会議録 Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals Ikari,A., Haga,H., Yoda,O., Uedono,A., Ujihira,Y. Trans Tech Publications	7 国際会議録 Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon Terashima,K., Ikarashi,T., Ono,H., Tajima,M. Trans Tech Publications
2 国際会議録 Oxygen Microclusters in Quenched Si Studied by Positron Annihilation Uedono,A., Ujihira,Y., Ikari,A., Yoda,O. Trans Tech Publications	8 国際会議録 TEMPERATURE RAMPING FOR NUCLEATION OF OXYGEN PRECIPITATES IN SILICON Pinizzoto, R. F., Schaake, H. F., Massey, R. G., Heidt, D. W. Materials Research Society
3 国際会議録 Oxygen Clusters in as-grown Cz-Si Crystals Probed by Positron Annihilation Ikari,A., Kawakami,K., Haga,H., Uedono,A., Wei,L., Kawano,T., Tanigawa,S. Trans Tech Publications	9 国際会議録 SCATTERING OF FREE CARRIERS BY OXYGEN PRECIPITATES IN CZOCHRALSKI-GROWN SILICON Nauka, K., Walukiewicz, W., Lagowski, J., Gatos, H. C. Materials Research Society
4 国際会議録 THE INTERRELATION BETWEEN THE MORPHOLOGY OF THE OXYGEN PRECIPITATES AND THE JUNCTION LEAKAGE CURRENT IN CZOCHRALSKI SILICON CRYSTALS Fujimori, H., Ushiku, Y., Ihnuma, T., Kirino, Y., Matsushita, Y. Electrochemical Society	10 国際会議録 YIELD STRESS OF CZOCHRALSKI SILICON- THE EFFECT OF IMPURITIES AND OXYGEN PRECIPITATE MORPHOLOGY Lawrence, J.D., Tsai, H.S. Materials Research Society
5 国際会議録 ENHANCEMENT OF OXYGEN PRECIPITATION IN QUENCHED CZOCHRALSKI SILICON CRYSTALS Hara, A, Fukuda, T., Hirai, I., Ohsawa, A. Materials Research Society	11 国際会議録 Analysis of the Nucleation Kinetics of Oxide Precipitates in Czochralski Silicon G. Kissinger, D. Kot, J. Dabrowski, V. Akhmetov, A. Sattler Electrochemical Society
6 国際会議録 Vacancy-Oxygen Complexes in Si Probed by Positron Annihilation Uedono,A., Kawano,T., Li,X.H., Wei,L., Tanigawa,Sh., Ikari,A., Kawakami,K., Haga,H., Itoh,H. Trans Tech Publications	12 国際会議録 Morphology of Oxide Precipitates in Czochralski Silicon Crystals Sueoka,K., Ikeda,N., Yamamoto,T., Kobayashi,S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12