Blank Cover Image

AN INVESTIGATION OF VACANCY CONCENTRATIONS IN BULK SILICON

著者名:
掲載資料名:
Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
262
発行年:
1992
開始ページ:
31
終了ページ:
36
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991576 [1558991573]
言語:
英語
請求記号:
M23500/262
資料種別:
国際会議録

類似資料:

1 国際会議録 A STUDY OF VACANCY DISTRIBUTIONS IN SILICON DURING TECHNOLGICAL PROCESSES

Zimmermann, H., Ryssel, H.

Electrochemical Society
7 国際会議録 Detailed Photocurrent Analysis of Iron Contaminated Boron Doped Silicon by Comparison of Simulation and Measurement

M. Rommel, A. Bauer, H. Ryssel

Electrochemical Society
2 国際会議録 Influence of RTP on Vacancy Concentrations

Jacob, M., Pichler, P., Wohs, M., Ryssel, H., Falster, R.

MRS - Materials Research Society
8 国際会議録 Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in Silicon

Brindos, R., Clark, M.H., Jones, K.S., Griglione, M., Gossmann, Hans-J., Agarwal, A., Murto, B., Andideh, E.

Materials Research Society
3 国際会議録 Vacancy-Nitrogen Complexes in Float-Zone Silicon

Quast, F., Pichler, P., Ryssel, H., Falster, R.

Electrochemical Society
9 国際会議録 High Temperature Implantation of Aluminum in 4H Silicon Carbide

M. Rambach, A.J. Bauer, H. Ryssel

Trans Tech Publications
4 国際会議録 Vacancy-Nitrogen Complexes in Float-Zone Silicon

Quast,F., Pichler,P., Ryssel,H., Falster,R.

Electrochemical Society, SPIE-The International Society for Optical Engineering
10 国際会議録 Ion Implantation

Ryssel H.

Martinus Nijhoff Publishers
5 国際会議録 RELAXATION BEHAVIOR OF METASTABLE As AND P CONCENTRATIONS IN Si AFTER PULSED AND CW LASER ANNEALING

Goetzlich, J., Tsien, P. H., Ryssel, H.

North-Holland
11 国際会議録 Low-cost silicon receiver OEICs (Invited Paper)

Zimmermann, H., Dietrich, H.

SPIE-The International Society for Optical Engineering
6 国際会議録 An Investigation of Vacancy Population During Arsenic Activation in Silicon

Dokumaci, O., Gossmann, H-J., Jones, K. S., Law, M. E.

MRS - Materials Research Society
12 国際会議録 The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behaviour

Falster, R., Gambaro, D., Olmo, M., Cornara, M., Korb, H.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12