ESTIMATING LOCAL DEPOSITION CONDITIONS AND KINETIC PARAMETERS USING FILM PROFILE
- 著者名:
- 掲載資料名:
- Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 260
- 発行年:
- 1992
- 開始ページ:
- 393
- 終了ページ:
- 398
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991552 [1558991557]
- 言語:
- 英語
- 請求記号:
- M23500/260
- 資料種別:
- 国際会議録
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7
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IMPACTS OF TEMPERATURE AND REACTANT FLOW RATE TRANSIENTS ON LPCVD TUNGSTEN SILICIDE FILM PROPERTIES
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6
国際会議録
Uniformity of Deposition in the High Temperature LPCVD of SiO2 From Dichiorosilane and Nitrous Oxide
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SPIE - The International Society of Optical Engineering |