CHARACTERISTICS AND RECOVERY OF Si SURFACES PLASMA ETCHING IN CHF3/C2F6

CHARACTERISTICS AND RECOVERY OF Si SURFACES PLASMA ETCHING IN CHF3/C2F6

著者名:

Park, H.-H.

掲載資料名:

Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

259

発行年:

1992

開始ページ:

219

終了ページ:

224

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991545 [1558991549]

言語:

英語

請求記号:

M23500/259

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015743
シリーズID:	PA00000011
会議名:	Symposium on chemical surface preparation, passivation, and cleaning for semiconductor growth and processing
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.27-1992.04.29

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