A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES OF INTERFACIAL TRAPS
- 著者名:
Ma, Y. Yasuda, T. Habermehl, S. He, S.S. Stephens, D.J. Lucovsky, G. - 掲載資料名:
- Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 259
- 発行年:
- 1992
- 開始ページ:
- 69
- 終了ページ:
- 74
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991545 [1558991549]
- 言語:
- 英語
- 請求記号:
- M23500/259
- 資料種別:
- 国際会議録
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