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WORK FUNCTION DIFFERENCE BETWEEN N-TYPE μc-Si GATE ELECTRODES DEPOSITED BY REMOTE PECVD AND P-TYPE c-Si SUBSTRATES IN MOS CAPACITORS

著者名:
掲載資料名:
Amorphous silicon technology, 1992
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
258
発行年:
1992
開始ページ:
979
終了ページ:
984
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991538 [1558991530]
言語:
英語
請求記号:
M23500/258
資料種別:
国際会議録

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