GROWTH OF TETRAHEDRAL PHASES OF BORON NITRIDE THIN FILMS BY REACTIVE SPUTTERING

GROWTH OF TETRAHEDRAL PHASES OF BORON NITRIDE THIN FILMS BY REACTIVE SPUTTERING

著者名:

掲載資料名:

Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

242

発行年:

1992

開始ページ:

599

終了ページ:

604

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991361 [1558991360]

言語:

英語

請求記号:

M23500/242

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015726
シリーズID:	PA00000011
会議名:	Symposium on wide band gap semiconductors
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.06

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2 国際会議録 *GROWTH AND DOPING OF GaN FILMS BY ECR-ASSISTED MBE Moustakas, T.D., Molnar, R.J. Materials Research Society	8 国際会議録 Growth of InGaN films and InGaN/AlGaN multiple quantum wells produced by molecular beam epitaxy Singh, R., Moustakas, T.D. Electrochemical Society
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4 国際会議録 A COMPARATIVE STUDY OF GaN FILMS GROWN ON DIFFERENT FACES OF SAPPHIRE BY ECR-ASSISTED MBE Moustakas, T.D., Molnar, R.J., Lei, T., Menon, G., Eddy, Jr., C.R. Materials Research Society	10 国際会議録 Hydride vapor phase epitaxy of gallium nitride films for quasi-bulk substrates Molnar, R.J., Gotz, W., Romano, L.T., Johnson, N.M. Electrochemical Society
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