*PROGRESS IN SILICON CARBIDE SEMICONDUCTOR TECHNOLOGY

*PROGRESS IN SILICON CARBIDE SEMICONDUCTOR TECHNOLOGY

著者名:

掲載資料名:

Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

242

発行年:

1992

開始ページ:

495

終了ページ:

506

総ページ数:

12

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991361 [1558991360]

言語:

英語

請求記号:

M23500/242

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015726
シリーズID:	PA00000011
会議名:	Symposium on wide band gap semiconductors
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.06

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2 テクニカルペーパー An Overview of Silicon Carbide Device Technology Neudeck, Philip G., Matus, Lawrence G. National Aeronautics and Space Adminstration	8 国際会議録 Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas Du, H., Skowronski, M., Neudeck, P.G., Trunek, A.J., Spry, D.J., Powell, J.A. Trans Tech Publications
3 テクニカルペーパー Advances in Silicorn Carbide Chemical Vapor Deposition (CVD) for Semicondictor Device Fabrication Anthony Powell, J., Petit, Jeremy B., Matus, Lawrence G. National Aeronautics and Space Adminstration	9 国際会議録 Lateral Growth Expansion of 4H/6H-SiC M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy A.J. Trunek, P.G. Neudeck, A.A. Woodworth, J.A. Powell, D.J. Spry Trans Tech Publications
4 国際会議録 DEEP-LEVEL DOMINATED ELECTRICAL CHARACTERISTICS OF Au CONTACTS ON s-SiC Das, K., Kong, H.S., Petit, J.B., Bumgarner, J.W., Matus, L.G., Davis, R.F. Materials Research Society	10 国際会議録 Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers Neudeck, P.G., Powell, J.A., Trunek, A.J., Spry, D.J. Trans Tech Publications
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