Blank Cover Image

INCORPORATION OF SILICON IN LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL GaAs

著者名:
掲載資料名:
Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
241
発行年:
1992
開始ページ:
27
終了ページ:
32
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991354 [1558991352]
言語:
英語
請求記号:
M23500/241
資料種別:
国際会議録

類似資料:

1 国際会議録 Electron paramagnetic resonance studies of low temperature molecular beam epitaxial GaAs layers

Bardeleben,H.J.von, Jia,Y.Q., Manasreh,M.O., Evans,K.R., Stutz,C.E.

Trans Tech Publications
7 国際会議録 INCORPORATION OF EXCESS ARSENIC GaAs AND A1GaAs EPILAYERS GROWNT AT ALOW SUBSTRATE TEMPERATURES BY MOLECULAR BEAM EPITAXY

Melloch, M.R., Otsuka, N., Mahalingam, K., Warren, A.C., Woodall, J.M., Kirchner, P.D.

Materials Research Society
2 国際会議録 TEMPERATURE DEPENDENCE OF THE LINEWIDTH AND PEAK POSITION OF THE INTERSUBBAND INFRARED ABSORPTION IN GaAs/Al0.3Ga0.7As QUANTUM WELLS

Manasreh, M.O., Stutz, C.E., Evans, K.R., Szmulowicz, F., Fischer, D.W.

Materials Research Society
8 国際会議録 MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF GaAs ON SAPPHIRE AND SILICON-ON-SAPPHIRE SUBSTRATES

Humphreys, T. P., Parikh, N. R., Summerville, M. K., Sukow, C. A., Miner,. C. J.

Materials Research Society
3 国際会議録 ELECTRON PARAMAGNETIC RESONANCE STUDY OF LOW TEMPERATURE MOLECULAR BEAM EPITAXY GROWN GaAs AND InP LAYERS

von Bardeleben, H.J., Jia, Y.Q., Hirtz, J.P., Garcia, J.C., Manasreh, M.O., Stutz, C.E., Evans,

Materials Research Society
9 国際会議録 Characterization of Low-Temperature-Grown Molecular-Beam Epitaxy GaAS

Look, D.C.

Electrochemical Society
4 国際会議録 PHOTOREFLECTANCE AND X-RAY PHOTOELECTRON SPECTROSCOPY IN LT MBE GaAs

Look, D.C., Hoelscher, J.E., Grant, J.T., Stutz, C.E., Evans, K.R., Numan, M.

Materials Research Society
10 国際会議録 Alloy Dependence of the Carrier Concentration and Negative Persistent Photoconductivity in Ga1-xAlx.Sb/InAs/Ga1-xLl.Sb Single Quantum Wells

Bardeleben,J.J.von, Manasreh,M.O., Stutz,C.E.

Trans Tech Publications
5 国際会議録 HETEROJUNCTION STUDY OF Ga0.92In0.8(p+)/GaAs (n) DIODES: CORRELATION OF ELECTRICAL AND STRUCTURAL CHARACTERISTICS

Choi, Y.W., Wie, C.R., Evans, K.R., Stutz, C.E.

Materials Research Society
11 国際会議録 BAND EDGE OPTICAL ABSORPTION OF MOLECULAR BEAM EPITAXIAL GaSb GROWN ON SEMI-INSULATING GaAs SUBSTRATE

Shah, M., Manasreh, M. O., Kaspi, R., Yen, M. Y., Philips, B. A., Skowronski, M., Shinar, J.

MRS - Materials Research Society
6 国際会議録 Incorporation of Silicon in(311)A and(111)A GaAs Grown by Molecular Beam Epitaxy

Wagner,J., Ramsteiner,M., Ashwin,M.J., Fahy,M.R., Newman,R.C., Braun,W., Ploog,K.

Trans Tech Publications
12 国際会議録 EFFECT OF A1 COMPOSITION ON THE DEEP LEVEL DONORS OF A1XGa1X-Sb/InAs INGLE QUANTUM WELLS

Lo, Ikai,, Mitchel, W. C., Stutz, C. E., Evans, K. R., Manasreh, M. O

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12