Blank Cover Image

ENERGY AND DEPTH DISTRIBUTIONS OF INTERFACE STATES AND BULK TRAPS AND THEIR ELECTRONIC EFFECTS IN GaInAs/GaAs HETEROJUNCTIONS

著者名:
掲載資料名:
Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
240
発行年:
1992
開始ページ:
633
終了ページ:
642
総ページ数:
10
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991347 [1558991344]
言語:
英語
請求記号:
M23500/240
資料種別:
国際会議録

類似資料:

1 国際会議録 CONTACT-RELATED DEEP STAGES IN Al-GaInP/GaAs INTERFACE

Huang, Z. C., Wie, C. R.

MRS - Materials Research Society
7 国際会議録 Interface defects and their effect on the electrical properties of ZnSe/GaAs heterojunctions grown by MBE

Seghier,D., Hauksson,I.S., Gislason,H.P., Prior,K.A., Cavenett,B.C.

Trans Tech Publications
2 国際会議録 HETEROJUNCTION STUDY OF Ga0.92In0.8(p+)/GaAs (n) DIODES: CORRELATION OF ELECTRICAL AND STRUCTURAL CHARACTERISTICS

Choi, Y.W., Wie, C.R., Evans, K.R., Stutz, C.E.

Materials Research Society
8 国際会議録 ANISOTROPIC STRUCTURAL AND ELECTRONIC PROPERTIES OF InGaAs/GaAs HETEROJUNCTIONS

Goldman, R. S., Rammohan, K., Raisanen, A., Goorsky, M., Brillson, L. J., Rich, D. H., Wieder, H. H., Kavanagh, K. L.

MRS - Materials Research Society
3 国際会議録 X-RAY AND RAMAN STUDIES OF MeV ION IMPLANTED GaInAs/GaAs

Wie, C. R., Xie, K., Burns, G., Dacol, F. H., Pettit, D., Woodall, J. M.

Materials Research Society
9 国際会議録 EFFECTS OF CRYSTAL ORIENTATIONS ON THE LOWEST ELECTRONIC ENERGY STATES ORDERING IN (GaAs)n/AlxGa1-xAs)n SUPERLATTICES

Talwar, D. N., Loehr, John P., Jogai, B.

MRS - Materials Research Society
4 国際会議録 CHARACTERIZATION OF MBE GaAs LAYERS GROWN AT 200°C-300°C

Wie, C. R., Xie, K., Berdin, T. T., Fronko, J. G., Look, D. C., Evans, K. R., Stutz, C. E.

Materials Research Society
10 国際会議録 Electronic States of n-type ｦﾄ-Doping in GaAs Heterostructures

Scolfaro,L.M.R., Leite,J.R., Mendonca,C.A.C., Beliaev,D., Shibli,S.M., Silva,E.C.F.Da, Meneses,E.A.

Trans Tech Publications
5 国際会議録 SIMULATION DESIGN AND DEVICE CHARACTERISTICS OF AlAs/GaAs/AlAs RESONANT TUNNELING STRUCTURES WITH A GaInAs EMITTER SPACER LAYER

Choi, Y. W., Kim, H. M., Wie, C. R.

Materials Research Society
11 国際会議録 The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

Litton, C.W., Alivov, Ya.I., Johnstone, D., Ozgur, U., Avrutin, V.S., Fan, Q., Akarca-Biyikli, S.S., Zhu, K., Morkoc, H.

Trans Tech Publications
6 国際会議録 STUDY OF DEEP LEVELS IN LT-GaAs MATERIALS AND SI-GaAs WAFERS BY AN IMPROVED THERMOELECTRIC EFFECT SPECTROSCOPY

Huang, Z.C., Wie, C.R.

Materials Research Society
12 国際会議録 LATTICE MISMATCH EFFECTS IN GaAsP/GaAs AND GaAs/GaAsP/GaAs HETEROSTRUCTURES

Choi, Y.W., Wie, C.R., Vernon, S.M.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12