RAPID GROWTH KINETICS, MECHANICAL PROPERTIES AND THERMAL STABILITY OF SiOδ THIN FILMS GROWN BY RAPID THERMAL LOW PRESSURE CHEMICAL VAPOR DEPOSITION

RAPID GROWTH KINETICS, MECHANICAL PROPERTIES AND THERMAL STABILITY OF SiOδ THIN FILMS GROWN BY RAPID THERMAL LOW PRESSURE CHEMICAL VAPOR DEPOSITION

著者名:

掲載資料名:

Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

240

発行年:

1992

開始ページ:

425

終了ページ:

430

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991347 [1558991344]

言語:

英語

請求記号:

M23500/240

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015724
シリーズID:	PA00000011
会議名:	Symposium on advanced III-V compound semiconductor growth, processing and devices
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.05

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