DRY ETCH SELF-ALIGNED AlInAs/InGaAs HETEROJUNCTION BIPOLAR TRANSISTORS

DRY ETCH SELF-ALIGNED AlInAs/InGaAs HETEROJUNCTION BIPOLAR TRANSISTORS

著者名:

Fullowan, T. R.

掲載資料名:

Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

240

発行年:

1992

開始ページ:

285

終了ページ:

292

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991347 [1558991344]

言語:

英語

請求記号:

M23500/240

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015724
シリーズID:	PA00000011
会議名:	Symposium on advanced III-V compound semiconductor growth, processing and devices
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.05

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2 国際会議録 Small diameter dry etched via holes in GaAs Pearton, S. J., Ren, F., Katz, A., Tseng, B., Lothian, J. R., Fullowan, T. R. MRS - Materials Research Society	8 国際会議録 InGaP/GaAs BASED SINGLE AND DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS GROWN BY MOMBE Ren, F., Abernathy, C.R., Pearton, S.J., Wisk, P.W., Esagui, R. Materials Research Society
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