THE USE OF TERTIARYBUTYLPHOSPHINE AND TERTIARYBUTYLARSINE FOR THE METALORGANIC MOLECULAR BEAM EPITAXIAL GROWTH OF RESONANT TUNNELING DEVICES

THE USE OF TERTIARYBUTYLPHOSPHINE AND TERTIARYBUTYLARSINE FOR THE METALORGANIC MOLECULAR BEAM EPITAXIAL GROWTH OF RESONANT TUNNELING DEVICES

著者名:

掲載資料名:

Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

240

発行年:

1992

開始ページ:

33

終了ページ:

38

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991347 [1558991344]

言語:

英語

請求記号:

M23500/240

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015724
シリーズID:	PA00000011
会議名:	Symposium on advanced III-V compound semiconductor growth, processing and devices
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.05

類似資料:

1 国際会議録 HETEROEPITAXIAL GROWTH OF InP AND GaInAs ON GaAs SUBSTRATES USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE Chu, Shirley S., Chu, T. L., Yoo, c. H., Smith, G. L. Materials Research Society	7 国際会議録 Status of Multi-Wafer Epitaxy For Growth of Optoelectronic Device Structures by Metalorganic Molecular Beam Epitaxy Abernathy, C.R. Electrochemical Society
2 国際会議録 Gas-Source Molecular Beam Epitaxy of Electronic Devices Beam, E. A., III, Brar, B., Broekaert, T. P. E., Chau, H. F., Liu, W., Seabaugh, A. C. MRS - Materials Research Society	8 国際会議録 LASER-ASSISTED GROWTH OF ZnSe BY METALORGANIC MOLECULAR BEAM EXPITAXY Coronado, C. A., Ho, E., Kolodziejski, L. A., Huber, C. A. Materials Research Society
3 国際会議録 *SEMICONDUCTOR RESONANT TUNNELING DEVICE PHYSICS AND APPLICATIONS Reed, Mark A., Seabaugh, Alan C., Kao, Yung-Chung, Randall, John N., Frensley, William R., Luscombe, James H. Materials Research Society	9 国際会議録 EXCIMER LASER IRRADIATION EFFECT ON METALORGANIC MOLECULAR BEAM DEPOSITION OF Al and AlAs: PROSPECTS FOR LASER-ASSISTED EPITAXIAL GROWTH OF GaAlAs Tokumitsu, E., Yamada, T., Konagai, M., Takahashi, K. Materials Research Society
4 国際会議録 EPITAXIAL GROWTH OF CdTe ON (100) GaAs/Si AND (111) GaAs/Si SUBSTRATES USING MOLECULAR BEAM EPITAXY AND METALORGANIC CHEMICAL VAPOR DEPOSITION Radhakrishnan, G., Nouhi, A., Katz, J. Materials Research Society	10 国際会議録 LOW TEMPERATURE EPITAXIAL GROWTH OF Al ON Si(111) AND CaF2(111) USING MOLECULAR BEAM EPITAXY Cho, C. -C., Liu, H. -Y. Materials Research Society
5 国際会議録 MOVPE GROWTH AND DOPING OF ZnTe USING TERTIARYBUTYLPHOSPHINE AS THE METALORGANIC DOPING PRECURSOR Perkins, N. R., Dawson-Elli, David F., Kuech, T. F. MRS - Materials Research Society	11 国際会議録 "A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy" Foxon T. C. Kluwer Academic Publishers
6 国際会議録 Growth of III Nitrides by Metalorganic Molecular Beam Epitaxy Abernathy, C.R. Electrochemical Society	12 国際会議録 METALORGANIC CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY GaAs AND A1GaAs USING TERTIARYBUTYLARSINE Haacke, G., Watkins, S.P., Burkhard, H., Calbick, C. J, Quick, J. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12