Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS

Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS

著者名:

掲載資料名:

Photons and low energy particles in surface processing : symposium held Decmber[i.e. December] 3-6, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

236

発行年:

1992

開始ページ:

341

終了ページ:

348

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991309 [1558991301]

言語:

英語

請求記号:

M23500/236

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015720
シリーズID:	PA00000011
会議名:	Symposium on photons and low energy particles in surface processing
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.03-1991.12.06

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2 国際会議録 LOW-TEMPERATURE DEVICE-QUALITY SiO2/Si (100) INTERFACES PREPARED BY A COMBINED REMOTE PLASMA OXIDATION-DEPOSITION PROCESS Yasuda, T., ma, Y., Lucovsky, G. Materials Research Society	8 国際会議録 COMPARISON OF TRAPPING STATES AT SiQ2/473Si INTERFACES ON Si(100), (110), AND (111) PREPARED BY PLASMA-ASSISTED OXIDATION AND OXIDE DEPOSITION, AND BY EXPOSURE … Yasuda, T., Ma, Y., Habermechl, S., Lucovsky, G. Materials Research Society
3 国際会議録 Nitrogen-atom bonding at SiO2/Si interfaces in Metal-Insulator-Semiconductor (MIS) stacked gates made by integration of plasma assisted oxidation-deposition and … Ma, Y., Yasuda, T., Lucovsky, G. MRS - Materials Research Society	9 国際会議録 Homoepitaxial Growth of Si by Remote Plasma Chemical Vapor Deposition Habermehl, S., Lucovsky, G. American Institute of Chemical Engineers
4 国際会議録 A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES … Ma, Y., Yasuda, T., Habermehl, S., He, S.S., Stephens, D.J., Lucovsky, G. Materials Research Society	10 国際会議録 CONTROL OF Si-SiO2 INTERFACE PROPERTIES IN MOS DEVICES PREPARED BY PLASMA-ASSISTED AND RAPID THERMAL PROCESSES Lucovsky, G., Yasuda, T., Ma, Y., Hattangady, S. V., Xu, X-L., Misra, V., Hornung, B., Wortman, J. J. MRS - Materials Research Society
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6 国際会議録 QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J., Habermehl, S. Materials Research Society	12 国際会議録 A LOW-TEMPERATURE PROCESS FOR DEVICE QUALITY Si/SiO2 INTERFACES ON Si(111) Yasuda, T., Lee, D. R., Bjorkman, C. H., Ma, Y., Lucovsky, G., Emmerichs, U., Meyer, C., Leo, K., Kurz, H. MRS - Materials Research Society

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