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SYNCHROTRON X-RAY TOPOGRAPHIC STUDY OF THE BEHAVIOR OF DEFECTS IN HIGH CARBON-CONTENT Si WAFERS DURING RTP

著者名:
掲載資料名:
Materials reliability issues in microelectronics : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
225
発行年:
1991
開始ページ:
301
終了ページ:
306
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991194 [1558991190]
言語:
英語
請求記号:
M23500/225
資料種別:
国際会議録

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