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Si AND GeSi1-x EPITAXIAL GROWTH ON SOI STRUCTURES BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION

著者名:
掲載資料名:
Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
224
発行年:
1991
開始ページ:
285
終了ページ:
292
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991187 [1558991182]
言語:
英語
請求記号:
M23500/224
資料種別:
国際会議録

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