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STUDY OF As AND P INCORPORATION BEHAVIOR IN GaAsP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

著者名:
掲載資料名:
Atomic layer growth and processing : symposium held April 29 - May 1, 1991, Anaheim, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
222
発行年:
1991
開始ページ:
145
終了ページ:
150
総ページ数:
6
出版情報:
Pittsburgh: Materials Research Society
ISSN:
02729172
ISBN:
9781558991163 [1558991166]
言語:
英語
請求記号:
M23500/222
資料種別:
国際会議録

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