THE EFFECT OF SELF NUCLEATION LAYERS ON THE MOCVD GROWTH OF GALLIUM NITRIDE ON SAPPHIRE
- 著者名:
- 掲載資料名:
- Heteroepitaxy of dissimilar materials : symposium held April 29-May 2, 1991, Anaheim, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 221
- 発行年:
- 1991
- 開始ページ:
- 167
- 終了ページ:
- 174
- 総ページ数:
- 8
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991156 [1558991158]
- 言語:
- 英語
- 請求記号:
- M23500/221
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society | |
Materials Research Society |
10
国際会議録
SPUTTER DEPOSITION OF INDIUM NITRIDE ON THE (111) FACE OF ELEMENTAL AND COMPOUND SEMICONDUCTORS
Materials Research Society |
5
国際会議録
Nucleation and Growth of Gallium Nitride Films on Si and Sapphire Substrates Using Buffer Layers
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |