DOPANT ENHANCED LOW-TEMPERATURE EPITAXIAL GROWTH BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION

DOPANT ENHANCED LOW-TEMPERATURE EPITAXIAL GROWTH BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION

著者名:

掲載資料名:

Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

220

発行年:

1991

開始ページ:

625

終了ページ:

632

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991149 [155899114X]

言語:

英語

請求記号:

M23500/220

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015704
シリーズID:	PA00000011
会議名:	Symposium on silicon molecular beam epitaxy
回次:	1991
会議開催地:	Anaheim, CA, USA
会議開催年:	1991.04.29-1991.05.03

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