RTP-CVD OF Si MATERIALS AND DEVICES FOR ULSI APPLICATIONS

RTP-CVD OF Si MATERIALS AND DEVICES FOR ULSI APPLICATIONS

著者名:

掲載資料名:

Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

220

発行年:

1991

開始ページ:

557

終了ページ:

568

総ページ数:

12

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991149 [155899114X]

言語:

英語

請求記号:

M23500/220

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015704
シリーズID:	PA00000011
会議名:	Symposium on silicon molecular beam epitaxy
回次:	1991
会議開催地:	Anaheim, CA, USA
会議開催年:	1991.04.29-1991.05.03

類似資料:

1 国際会議録 *APPLICATION OF RTP-CVD TECHNOLOGY TO ULSI DEVICE FABRICATION Jung, K. H., Hseih, T. Y., Kwong, D. L. Materials Research Society	7 国際会議録 Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications Kim,B.Y., Wristers,D., Kwong,D.L. SPIE-The International Society for Optical Engineering
2 国際会議録 DOPANT ENHANCED LOW-TEMPERATURE EPITAXIAL GROWTH BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION Hsieh, T.Y., Jung, K.H., Kwong, D.L. Materials Research Society	8 国際会議録 VISIBLE PHOTOLUMINESCENCE AND MICROSTRUCTURE OF ANNEALED AND CHEMICALLY ETCHED AMORPHOUS Si Jung, K.H., Shih, S., Kwong, D.L., Cho, C.C., Gnade, B.E. Materials Research Society
3 国際会議録 GexSi1-x WAVEGUIDES GROWN BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION Jung, K.H., Mayer, R.A., Hsieh, T.Y., Campbell, J.C., Kwong, D.L. Materials Research Society	9 国際会議録 N2O-Based Gate Dielectrics for ULSI Applications Kim, J., Yoon, G.W., Lo, G.Q., Ahn, J., Kwong, D.L. Electrochemical Society
4 国際会議録 PHOTOLUMINESCENCE AND STRUCTURE OF CHEMICALLY ETCHED Si Shih, S., Jung, K.H., Hsieh, T.Y., Sarathy, J., Tsai, C., Li, K.-H., Campbell, J.C., Kwong, D.L. Materials Research Society	10 国際会議録 lssues on the In-Situ Cleaning of the Silicon Surface and the Process Conditions for Epitaxial Silicon Growth in an RTP CVD Systems Wang, C.L., Unnikrishnan, S., Kim, B.Y., Kwong, D.L., Tasch, A.F. Electrochemical Society
5 国際会議録 STRUCTURE AND COMPOSITION OF LUMINESCENT LATERALLY ANODIZED POROUS Si Jung, K.H., Shih, S., Hsieh, T.Y., Campbell, J.C., Kwong, D.L., George, T., Lin, T.L., Liu, H.Y., Zavada, J., Novak, S. Materials Research Society	11 国際会議録 Effect of Trace Oxygen on Selective Silicon Deposition in a Single-Wafer RTP CVD Reactor Wang, C.L., Unnikrishnan, S., Kim, B.Y., Kwong, D.L., Tasch, A.F. Electrochemical Society
6 国際会議録 STRUCTURAL INVESTIGATION OF PHOTOLUMINESCENT POROUS Si BY TRANSMISSION ELECTRON MICROSCOPY Shih, S., Jung, K.H., Kwong, D.L. Materials Research Society	12 国際会議録 Recent Developments in Ultratlsin Nitride Gate Stack Prepared by In-Situ RTP Multiprocessing for CMOS ULSI Song, S.C., Kini, B.Y., Loan, H.F., Kwong, D.-L., Gardner, M., Fulford, J., Wristers, D., Gelpey, J., Marcus, S. Electrochemical Society

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