MBE GROWTH AND CHARACTERIZATION OF SixGe1-x MULTILAYER STRUCTURES ON Si(100) FOR USE AS A SUBSTRATE FOR GaAs HETEROEPITAXY
- 著者名:
Posthill, J.B. Malta, D.P. Venkatasubramanian, R. Sharps, P.R. Timmons, M.L. Markunas, R.J. Humphreys, T.P. Parikh, N.R. - 掲載資料名:
- Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 220
- 発行年:
- 1991
- 開始ページ:
- 265
- 終了ページ:
- 270
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991149 [155899114X]
- 言語:
- 英語
- 請求記号:
- M23500/220
- 資料種別:
- 国際会議録
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11
国際会議録
HETEROEPITAXY OF GaAs BY MBE ON HIGH TEMPERATURE HYDROGEN ANNEALED NOMINALLY (100) ORIENTED SILICON
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