DEFECT CENTERS FORMED DURING WET OXIDATION OF Si-Ge/Si HETEROSTRUCTURES

DEFECT CENTERS FORMED DURING WET OXIDATION OF Si-Ge/Si HETEROSTRUCTURES

著者名:

掲載資料名:

Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

220

発行年:

1991

開始ページ:

199

終了ページ:

204

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991149 [155899114X]

言語:

英語

請求記号:

M23500/220

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015704
シリーズID:	PA00000011
会議名:	Symposium on silicon molecular beam epitaxy
回次:	1991
会議開催地:	Anaheim, CA, USA
会議開催年:	1991.04.29-1991.05.03

類似資料:

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2 国際会議録 THE MECHANISM OF EPITAXIAL Si-Ge/Si HETEROSTRUCTURS FORMATION BY WET OXIDATION OF AMORPHOUS Si-Ge THIN FILMS Prokes, S.M., Rai, A.K., Carlos, W.E. Materials Research Society	8 国際会議録 INITIAL FORMATION OF SiGe/Si EPITAXIAL STRUCTURES AND OXIDES PRODUCED BY WET OXIDATION OF AMORPHOUS SiXGe1-XLAYERS Prokes, S.M., Rai, A.K. Materials Research Society
3 国際会議録 CHEMICALLY ASSISTED ION BEAM ETCHING OF SiGe Glembocki, O.J., Prokes, S.M., Stahlbush, R.E. Materials Research Society	9 国際会議録 Extended Defects in 4H-SiC PiN Diodes Twigg, M.E., Stahlbush, R.E., Fatemi, M., Arthur, S.D., Fedison, J.B., Tucker, J.B., Wang, S. Materials Research Society
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