VERY THICK COHERENTLY STRAINED GexSi1-x LAYERS GROWN IN A NARROW TEMPERATURE WINDOW
- 著者名:
- 掲載資料名:
- Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 220
- 発行年:
- 1991
- 開始ページ:
- 175
- 終了ページ:
- 180
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991149 [155899114X]
- 言語:
- 英語
- 請求記号:
- M23500/220
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
7
国際会議録
CHARACTERIZATION OF Si1-xGex/Si HETEROSTRUCTURES USING OPTICALLY-DETECTED MAGNETIC RESONANCE
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
3
国際会議録
ON THE CRITIAL LAYER THICKNESS OF STRAINED-LAYER HETERO-EPITAXIAL CoSi2 FILMS ONF < 111 > Si
Materials Research Society |
9
国際会議録
DEFECTS AND STRAIN IN GeXSi1-X/Si LAYERS GROWN BY RAPID THERMAL PROCESSING CHEMCIAL VAPOR DEPOSITION
Materials Research Society |
Materials Research Society |
Materials Research Society |
Plenum Press |
Materials Research Society |
Materials Research Society |
12
国際会議録
High-performance 1.3-and 1.55-ヲフm InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD
SPIE-The International Society for Optical Engineering |