EXPERIMENTAL AND MODEL STUDIES OF DOPANT SEGREGATION DURING GROWTH OF SILICON FILMS BY MOLECULAR BEAM EPITAXY

EXPERIMENTAL AND MODEL STUDIES OF DOPANT SEGREGATION DURING GROWTH OF SILICON FILMS BY MOLECULAR BEAM EPITAXY

著者名:

掲載資料名:

Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

220

発行年:

1991

開始ページ:

91

終了ページ:

96

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991149 [155899114X]

言語:

英語

請求記号:

M23500/220

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015704
シリーズID:	PA00000011
会議名:	Symposium on silicon molecular beam epitaxy
回次:	1991
会議開催地:	Anaheim, CA, USA
会議開催年:	1991.04.29-1991.05.03

類似資料:

1 国際会議録 INDIUM ION DOPING DURING Si MOLECULAR BEAM EPITAXY Hirashita, N., Noel, J. -P., Rockett, A., Markert, L., Greene, J.-E., Hasan, M. A., Knall, J., Ni, W,.-X., Sundgren, J. … Materials Research Society	7 国際会議録 GROWTH OF HIGH-RESISTIVITY WURTZITE AND ZINCBLENDE STRUCTURE SINGLE CRYSTAL GaN BY REACTIVE-ION MOLECULAR BEAM EPITAXY Powell, R.C., Tomasch, G.A., Kim, Y.-W., Thornton, J.A., Greene, J.E. Materials Research Society
2 国際会議録 SURFACE SEGREGATION OF BORON DURING Si-MBE GROWTH Sardela, M.R., Ni, W.-X., Ekberg, J.O., Sundgren, J.-E., Hansson, G.V. Materials Research Society	8 国際会議録 The role of non-radiative defects in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy Buyanova,I.A., Chen,W.M., Pozina,G., Monemar,B., Ni,W.X., Hansson,G.V. Trans Tech Publications
3 国際会議録 LOW-ENERGY ACCELERATED-ION DOPING OF Si DURING MOLECULAR BEAM EPITAXY:INCORPORATION PROBABILITIES, DEPTH DISTRIBUTION, AND ELECTRICAL PROPERTIES Markert C. L., Knall J., Noel -P. J., Hasan -A. M., Greene E. J., Sundgren -E. J. Kluwer Academic Publishers	9 国際会議録 LOW-ENERGY ION/SURFACE INTERACTIONS DURING FILM GROWTH KINETICS, DEFECT STRUCTURE, AND ELEMENTAL INCORPORATION PROBABILITIES Greene E. J., Barnett A. S., Sundgren -E. J., Rockett A. Kluwer Academic Publishers
4 国際会議録 ASPECTS OF CRYSTAL QUALITY OF Si(100) FILMS GROWN BY MOLECULAR BEAN EPITAXY Ni, W.-X., Henry, A., Ekberg, J.O., Hansson, G.V. Materials Research Society	10 国際会議録 Physics of Glow Discharge Plasma/Surface Interactions During Thin Film Growth Sundgren J-E. Plenum Press
5 国際会議録 Ge SEGREGATION AND SURFACE ROUGHENING DURING Si GROWTH ON Ge(001)2x1 BY GAS-SOURCE MOLECULAR BEAM EPITAXY FROM Si2H6 Tsu, R., Lin, D.-S., Greene, J.E., Chiang, T.-C. Materials Research Society	11 国際会議録 THE INFLUENCE OF RECONSTRUCTION ON THE INITIAL STAGES OF SILICON MOLECULAR BEAM EPITAXY Gossrnann, H.-J., Feldman, L.C. Materials Research Society
6 国際会議録 *THE ROLE OF LOW-ENERGY ION/SURFACE INTERACTIONS DURING CRYSTAL GROWTH FROM THE VAPOR PHASE Greene, J.E., Rockett, A., Sundgren, J.-E. Materials Research Society	12 国際会議録 Indium Incorporation and Surface Segregation During InGaN Growth by Molecular Eeam Epitaxy Chen, Huajie, Feenstra, R.M., Northrup, J. E., Neugebauer, J., Greve, D.W. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12