ELECTRON TRANSPORT IN a-Si:H AT LOW TEMPERATURES

ELECTRON TRANSPORT IN a-Si:H AT LOW TEMPERATURES

著者名:

掲載資料名:

Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

219

発行年:

1991

開始ページ:

563

終了ページ:

568

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991132 [1558991131]

言語:

英語

請求記号:

M23500/219

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015703
シリーズID:	PA00000011
会議名:	Symposium on amorphous silicon technology
回次:	1991
会議開催地:	Anaheim, CA, USA
会議開催年:	1991.04.30-1991.05.03

類似資料:

1 国際会議録 ELECTRON AND HOLE TRANSPORT IN a-Si:H AT HIGH FIELD AND LOW TEMPERATURE Nebel, C.E., Street, R.A. Materials Research Society	7 国際会議録 Laser Interference Structuring of a-Si:H Nebel, C. E. MRS - Materials Research Society
2 国際会議録 ELECTRON TRANSPORT AND CONDUCTION-BAND-TAIL STATES IN a-Si:H DEPOSITED WITH A REMOTE HYDROGEN PLASMA Nebel, C.E., Street, R.A., Johnson, N.M., Walker, J. Materials Research Society	8 国際会議録 Features of Charge Carrier Transport in μc-Si:H/a-Si:H Superlattices Juska, G., Nekrasas, N., Stuchlik, I., Arlauskas, K., Viliunas, M., Kocka, J. Trans Tech Publications
3 国際会議録 *BAND TAILING AND TRANSPORT IN a-Si:H ALLOYS Bauer, G. H., Nebel, C. E., Schubert, M. B, Schumm, G. Materials Research Society	9 国際会議録 KINETICS OF DOPANT METASTABILITY IN a-Si:H Nebel, C.E., Street, R.A., Johnson, N.M., Jackson, W.B. Materials Research Society
4 国際会議録 REVEALING MYSTERIES OF HALL EXPERIMENTS ON a-Si:H AND a-SiC:H Nebel, C.E., Street, R.A. Materials Research Society	10 国際会議録 Electron paramagnetic resonance studies of low temperature molecular beam epitaxial GaAs layers Bardeleben,H.J.von, Jia,Y.Q., Manasreh,M.O., Evans,K.R., Stutz,C.E. Trans Tech Publications
5 国際会議録 EFFECTIVE p+-DOPING OF a-Si:H AND a-SiC:H LAYERS BY PLASMA ASSISTED BORON DIFFUSION Mohring, H.-D., Bauer, G.H., Bilger, G., Nebel, C.E. Materials Research Society	11 国際会議録 ELECTRON PARAMAGNETIC RESONANCE STUDY OF LOW TEMPERATURE MOLECULAR BEAM EPITAXY GROWN GaAs AND InP LAYERS von Bardeleben, H.J., Jia, Y.Q., Hirtz, J.P., Garcia, J.C., Manasreh, M.O., Stutz, C.E., Evans, Materials Research Society
6 国際会議録 Charge Carrier Transport in ｦﾌc-Si:H Juska,G., Arlauskas,K., Genevicius,K., Kocka,J. Trans Tech Publications	12 国際会議録 Tales of the Abnormal: Nanocrystalline Grain Growth at Low Temperatures H. Paul, J.M. Dake, C.E. Krill Trans Tech Publications

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