IN SITU SPECTROSCOPIC ELLIPSOMETRY FOR REAL TIME SEMICONDUCTOR GROWTH MONITOR

IN SITU SPECTROSCOPIC ELLIPSOMETRY FOR REAL TIME SEMICONDUCTOR GROWTH MONITOR

著者名:

Johs Blaine

掲載資料名:

Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

216

発行年:

1991

開始ページ:

459

終了ページ:

464

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991088 [1558991085]

言語:

英語

請求記号:

M23500/216

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015700
シリーズID:	PA00000011
会議名:	Symposium on long-wavelength semiconductor devices, materials, and processes
回次:	1990
会議開催地:	Boston, MA, USA
会議開催年:	1990.11.26-1990.11.29

類似資料:

1 国際会議録 IN SITU AND EX SITU APPLICATIONS OF SPECTROSCOPIC ELLIPSOMETRY Woollam, John A., Johs, Blaine, McGahan, William A., Snyder, Paul G., Hale, Jeffrey, Yao, Huade Walter MRS - Materials Research Society	7 国際会議録 Real-Time Monitoring of Semiconductor Growth by Spectroscopic Ellipsometry Johs, B., Hale, J., Herzinger, C., Doctor, D., Elliott, K., Olson, G., Chow, D., Roth, J., Ferguson, I., Pelczynski, M., … MRS - Materials Research Society
2 国際会議録 REAL-TIME ANALYSIS OF IN-SITU SPECTROSCOPIC ELLIPSOMETRIC DATA DURING MBE GROWTH OF III-V SEMICONDUCTORS Johs, B., Edwards, J. L., Shiralagi, K. T., Droopad, R., Choi, K. Y., Maracas, G. N., Meyer, D., Cooney, G. T., Woollam, … Materials Research Society	8 国際会議録 *VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY (VASE FOR THE STUDY OF ION-BEAM -AND GROWTH MODIFIED SOLIDS Woollam, John A., Snyder, Paul G., Rost, M. C. Materials Research Society
3 国際会議録 GaAs(100) SURFACE MODIFICATIONS AT ELEVATED TEMPERATURES, STUDIED BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY Yao, Huade, Snyder, Paul G., Woollam, John A. Materials Research Society	9 国際会議録 IN-SITU MEASUREMENT OF GaAs OPTICAL CONSTANTS AND SURFACE QUALITY, AS FUNCTIONS OF TEMPERATURE Yao, Huade, Snyder, Paul G. Materials Research Society
4 国際会議録 IN SITU STUDIES OF ELECTRON CYCLOTRON RESONANCE PLASMA ETCHING OF SEMICONDUCTORS BY SPECTROSCOPIC ELLIPSOMETRY Nafis, S., Ianno, N.J., Snyder, Paul G., Woollam, John A., Johs, Blaine Materials Research Society	10 国際会議録 Real-time monitoring and control during MBE growth of GaAs/AIGaAs Bragg reflectors using multiwave ellipsometry Wagner,T., Johs,B.D., Herzinger,C.M., He,P., Pittal,S., Woollam,J.A. SPIE-The International Society for Optical Engineering
5 国際会議録 Variable angle spectroscopic ellipsometry studies of HgI2 Yao, Huade, Johs, Blaine MRS - Materials Research Society	11 国際会議録 IN-SITU SPECTROSCOPIC ELLIPSOMETRY APPLIED TO ZnSe AND ZnCdSe GROWTH PROCESS IN ORGANOMETALLIC VAPOR PHASE EPITAXY Iacoponi, J., Bhat, I.B., Johs, B., Woollam, J.A. Materials Research Society
6 国際会議録 TEMPERATURE DEPENDENCE OF OPTICAL PROPERTIES OF AIAs. STUDIED BY IN SITU SPECTROSCOPIC ELLIPSOMETRY Yao, Huade,, Snyder, Paul G., Stair, Kathleen, Bird, Thomas Materials Research Society	12 国際会議録 CHARACTERIZATION OF POLYSILICON THIN FILMS BY VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY Ziong, Yi-Ming, Snyder, Paul G., Woollam, John A., Krosche, Eric R., Strausser, Yale Materials Research Society

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