IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS
- 著者名:
Pearton, S.J. Ren, F. D'asaro, L.A. Hobson, W.S. Fullowan, T.R. Lothian, J. Abernathy, C.R. Kopf, R.F. Kuo, J.-M. - 掲載資料名:
- Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 216
- 発行年:
- 1991
- 開始ページ:
- 451
- 終了ページ:
- 458
- 総ページ数:
- 8
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991088 [1558991085]
- 言語:
- 英語
- 請求記号:
- M23500/216
- 資料種別:
- 国際会議録
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