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PHOTOREFLECTANCE AND DOUBLE CRYSTAL X-RAY STUDY OF STRAINED InGaAsP LAYERS ON InP SUBSTRATES

著者名:
掲載資料名:
Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
216
発行年:
1991
開始ページ:
335
終了ページ:
340
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991088 [1558991085]
言語:
英語
請求記号:
M23500/216
資料種別:
国際会議録

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