ANISOTROPIC DISPLACEMENT THRESHOLD ENERGIES IN SILICON BY MOLECULAR DYNAMICS SIMULATIONS

ANISOTROPIC DISPLACEMENT THRESHOLD ENERGIES IN SILICON BY MOLECULAR DYNAMICS SIMULATIONS

著者名:

掲載資料名:

Defects in materials : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

209

発行年:

1991

開始ページ:

171

終了ページ:

176

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991019 [1558991018]

言語:

英語

請求記号:

M23500/209

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015693
シリーズID:	PA00000011
会議名:	Symposium on defects in materials
回次:	1990
会議開催地:	Boston, MA, USA
会議開催年:	1990.11.26-1990.11.29

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