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*THE ENCHANTING PROPERTIES OF OXYGEN ATOMS IN SILICON

著者名:
掲載資料名:
Defects in materials : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
209
発行年:
1991
開始ページ:
103
終了ページ:
118
総ページ数:
16
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991019 [1558991018]
言語:
英語
請求記号:
M23500/209
資料種別:
国際会議録

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