HIGH PERFORMANCE 0.5 AND 0.25 μm GATE GaAs MESFET GROWN BY MOCVD USING TERTIARYBUTYLARSINE

HIGH PERFORMANCE 0.5 AND 0.25 μm GATE GaAs MESFET GROWN BY MOCVD USING TERTIARYBUTYLARSINE

著者名:

Sundaram, V.S.

掲載資料名:

Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

204

発行年:

1991

開始ページ:

123

終了ページ:

128

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990968 [1558990968]

言語:

英語

請求記号:

M23500/204

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015688
シリーズID:	PA00000011
会議名:	Symposium on chemical perspectives of microelectronic materials
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1990.11.26-1990.11.28

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