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CHARACTERISTICS OF OXIDE LAYER GROWN ON GALLIUM ARSENIDE USING 2.8-eV TRANSLATIONAL ENERGY ATOMIC OXYGEN

著者名:
掲載資料名:
Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
204
発行年:
1991
開始ページ:
59
終了ページ:
64
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990968 [1558990968]
言語:
英語
請求記号:
M23500/204
資料種別:
国際会議録

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