Si(100) SURFACE PREPARATION BY IN-SITU OR IN-VACUO EXPOSURE TO REMOTELY PLASMA-GENERATED ATOMIC HYDROGEN: APPLICATIONS TO DEPOSITED SiO2 AND EPITAXIAL GROWTH OF Si
- 著者名:
Yasuda, T. Ma, Y. Habermehl, S. Kim, S.S. Lucovsky, G. Schneider, T.P. Cho, J. Nemanich R.J. - 掲載資料名:
- Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 202
- 発行年:
- 1991
- 開始ページ:
- 395
- 終了ページ:
- 400
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990944 [1558990941]
- 言語:
- 英語
- 請求記号:
- M23500/202
- 資料種別:
- 国際会議録
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