HETEROEPITAXIAL GROWTH OF InP AND GaInAs ON GaAs SUBSTRATES USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE

HETEROEPITAXIAL GROWTH OF InP AND GaInAs ON GaAs SUBSTRATES USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE

著者名:

掲載資料名:

Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

198

発行年:

1990

開始ページ:

271

終了ページ:

276

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990876 [1558990879]

言語:

英語

請求記号:

M23500/198

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015682
シリーズID:	PA00000011
会議名:	Symposium on epitaxial heterostructures
回次:	1990
会議開催地:	San Francisco, CA, USA
会議開催年:	1990.04.16-1990.04.19

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