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GaAs HETEROEPITAXY ON SUBSTRATE-ENGINEERED SILICON USING SiXGe1-X MULTILAYER STRUCTURE

著者名:
Posthill, J. B.
Venkatasubramanian, R.
Malta, D. P.
Hattangady, S. V.
Fountain, G. G.
Timmons,. M. L.
Markunas, R. J.
さらに 2 件
掲載資料名:
Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
198
発行年:
1990
開始ページ:
219
終了ページ:
224
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990876 [1558990879]
言語:
英語
請求記号:
M23500/198
資料種別:
国際会議録

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