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THE INFLUENCE OF INITIAL GROWTH ON DEFECT GENERATION IN MOCVD GROWN GaAs/Si HETEROEPITAXIAL LAYERS

著者名:
掲載資料名:
Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
198
発行年:
1990
開始ページ:
207
終了ページ:
212
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990876 [1558990879]
言語:
英語
請求記号:
M23500/198
資料種別:
国際会議録

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