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ASSESSMENT OF SURFACE DAMAGE OF GALLIUM ARSENIDE DUE TO REACTIVE ION ETCHING

著者名:
Puttock, M. S.
Thomas, H.
Morgan, D. V.
Rossow, U.
Zahn, D. R. T.
Richter, W.
Hilton, K. P.
Woodward, J.
さらに 3 件
掲載資料名:
Plasma processing and synthesis of materials III : symposium held April 17-19, 1990, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
190
発行年:
1991
開始ページ:
255
終了ページ:
260
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990791 [1558990798]
言語:
英語
請求記号:
M23500/190
資料種別:
国際会議録

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