Blank Cover Image

ASSESSMENT OF SURFACE DAMAGE OF GALLIUM ARSENIDE DUE TO REACTIVE ION ETCHING

著者名:
Puttock, M. S.
Thomas, H.
Morgan, D. V.
Rossow, U.
Zahn, D. R. T.
Richter, W.
Hilton, K. P.
Woodward, J.
さらに 3 件
掲載資料名:
Plasma processing and synthesis of materials III : symposium held April 17-19, 1990, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
190
発行年:
1991
開始ページ:
255
終了ページ:
260
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990791 [1558990798]
言語:
英語
請求記号:
M23500/190
資料種別:
国際会議録

類似資料:

1 国際会議録 Highly chemical reactive ion etching of gallium nitride

Karouta, F., Jacobs, B., Moerman, I., Jacobs, K., Weyher, J. L., Porowski, S., Crane, R., Hageman, P. R.

MRS-Materials Research Society
7 国際会議録 EFFECTS OF POST ETCH TREATMENTS ON CONTAMINATED SILICON SURFACE DUE TO CHF3/C2F6 REACTIVE ION ETCHING

Park, H.-H., Kwon, K.-H., Lee, S.-H., Nahm, S., Lee, J.-W., Koak, B.-H., Suh, K.-S., Kwon, O.-J., Lee, J.-L., Yeom, …

MRS - Materials Research Society
2 国際会議録 LOW DAMAGE MAGNETRON REACTIVE ION ETCHING OF GaAs

McLane, G., Meyyappan, M., Cole, M. W., Lee, H. S., Lareau, R., Namaroff, M., Sasserath, J.

Materials Research Society
8 国際会議録 SHALLOW DOPING OF GALLIUM ARSENIDE BY RECOIL IMPLANTATION

Sadana, D. K., de Souza, J. P., Rutz, R. F., Cardone, F., Norcott, M. H.

Materials Research Society
3 国際会議録 Inductively Coupled Plasma Source for Reactive Ion Etching

Puttock, M., Iacopi, A., Powell, G., Clausen, M., Bennett, R.

Electrochemical Society
9 国際会議録 OPTICAL, CHEMICAL AND ELECTRICAL CHARACTERIZATION OF ION-ETCHED GALLIUM ARSENIDE SURFACES

Feng, G. F., Holtz, M., Zallen, R., Epp. J. M., Dillard, J. G., Cole, E., Johnson, P., Sen, S., Burton, L. C.

Materials Research Society
4 国際会議録 Development of HFSYSTEM Programs for Hydrogen Flouride Dispersion Assessment

Blewitt, D.N., McFarlane, K., Prothero, A., Puttock, J. S., Rees, F.J., Roberts, P.T., Witlox, H.W.M.

American Institute of Chemical Engineers
10 国際会議録 REACTIVE ION ETCHING OF MULTI-LAYER RESIST

Ng, H.Y., Klaus, D.P., Polcan, M.R., Molzen, W.W.

Materials Research Society
5 国際会議録 LASER-ASSITED LOCAL ETCHING OF GALLIUM ARSENIDE

Takai, M., Tokuda, J., Nakai, H., Gamo, K., Namba, S.

North-Holland
11 国際会議録 Gallium-arsenide electron-bombarded CCD technology

Aebi, V. W., Costello, K. A., Edgecumbe, J. P., Boyle, J. J., Robbins, W. L., Bell, R., Burt, D., Harris, A., Palmer, …

SPIE - The International Society of Optical Engineering
6 国際会議録 Positron Mobility in Gallium Arsenide

Au,H.L., Ling,C.C., Lee,T.C., Beling,C.D., Fung,S.

Trans Tech Publications
12 国際会議録 Electrical Characterization of Damage Phenomena Induced in Silicon by Magnetically-Enhanced Reactive Ion Etching

Awadelkarim, O.O., Gu, T., Mikulan, P.I., Fonash, S.J., Reinhardt, K., Chan, Y.D.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12