EFFECT OF RF PLASMA ON SILICON NITRIDE DEPOSITION FROM SiF4/NH3 GAS MIXTURES IN A HOT WALL REACTOR

EFFECT OF RF PLASMA ON SILICON NITRIDE DEPOSITION FROM SiF4/NH3 GAS MIXTURES IN A HOT WALL REACTOR

著者名:

掲載資料名:

Plasma processing and synthesis of materials III : symposium held April 17-19, 1990, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

190

発行年:

1991

開始ページ:

107

終了ページ:

112

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990791 [1558990798]

言語:

英語

請求記号:

M23500/190

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015674
シリーズID:	PA00000011
会議名:	Symposium on plasma processing and synthesis of materials plasma processing and synthesis of materials
回次:	3rd
会議開催地:	San Francisco, CA, USA
会議開催年:	1990.04.17-1990.04.19

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