RELIABILITY OF OHMIC CONTACTS FOR AlGaAs/GaAs HBTs

RELIABILITY OF OHMIC CONTACTS FOR AlGaAs/GaAs HBTs

著者名:

Jackson, G. S.

掲載資料名:

Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

184

発行年:

1990

開始ページ:

225

終了ページ:

230

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990739 [1558990739]

言語:

英語

請求記号:

M23500/184

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015668
シリーズID:	PA00000011
会議名:	Symposium on degradation mechanisms in III-V compound semiconductor devices and structures
回次:	1990
会議開催地:	San Francisco, CA, USA
会議開催年:	1990.04.17-1990.04.18

類似資料:

1 国際会議録 RELIABILITY OF OHMIC CONTACTS FOR AlGaAs/GaAs HBTs Jackson, G. S., Tong, E., Saledas, P., Kazior, T. E., Sprague, R., Brooks, R. C., Hsieh, K. C. Materials Research Society	7 国際会議録 Investigation of Ohmic Contact Corrosion in GaAs HBT Fabrication H. Shen, L. Luu-Henderson, S. O'Neil, S. Tiku, R. Ramanathan Electrochemical Society
2 国際会議録 Pd-Ge-Au OHMIC CONTACTS TO GaAs: RELIABILITY AND FAILURE ANALYSIS Kazior, T. E., Hieslmair, H., Brooks, R. C. Materials Research Society	8 国際会議録 Thermal Behavior of Ohmic Contacts for GaInP/GaAs HBTs Cassette, S., Delage, S.L., Blanck, H., Chartier, E., Florid, D., DiForte-Poisson, M.A., Chevalier, S., Furlan, G.S. Electrochemical Society
3 国際会議録 Pd-Ge-Au OHMIC CONTACTS TO GaAs: RELIABILITY AND FAILURE ANALYSIS Kazior, T. E., Hieslmair, H., Brooks, R. C. Materials Research Society	9 国際会議録 p-Ohmic Contact Study for Intra-Cavity Contacts in AlGaAs/GaAs VCSELs Luo, B., Dang, G., Zhang, A.-P., Ren, F., Lopata, J., Chu, S.N.G., Hobson, W.S, Pearton, S.J. Electrochemical Society
4 国際会議録 HIGHLY RELIABLE WGe OHMIC CONTACT TO GaAs-AlGaAs HBTs Fullowan, T.R., Ren, F., Tseng, B., Pearton, S.J., Abernathy, C.R., Harriott, L.R., Lane, E. Materials Research Society	10 国際会議録 THE EFFECT OF RAPID THERMAL ANNEALING ON THE ELECTRICAL AND MATERIAL CHARACTERISTICS OF PLANAR DOPED AND UNIFORMLY DOPED GaAs/AlGaAs/InGaAs PSEUDOMORPHIC HEMT … Kazior, T. E., Brierlev, S. K. Materials Research Society
5 国際会議録 RADIATION TESTING OF AlInAs/InGaAs AND GaAs/AlGaAs HBTs Witmer, S. B., Mittleman, S., Lehy, D., Ren, F., Fullowan, T. R., Kopf, R. F., Abernathy, C. R., Pearton, S. J., … Materials Research Society	11 国際会議録 In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS Ren, F., Pearton, S. J., Hobson, W. S., Fullowan, T. R., Emerson, A. B., Yanof, A. W., Schleich, D. M. Materials Research Society
6 国際会議録 REACTIVE ION BEAM ASSISTED EVAPORATION OF TIN FILMS FOR USE AS DIFFUSION BARRIERS IN GaAs MMICs Kazior, T. E., Brooks, R. C. Materials Research Society	12 国際会議録 DC and Microwave Characteristics of 100 V GaAs/AlGaAs HBTs Baca, A.G., Chang, P.C., Klem, J.F., Ashby, C.I.H., Martin, D.C. Electrochemical Society

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