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HIGH RESOLUTION ELECTRON MICROSCOPY OF DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

著者名:
掲載資料名:
High resolution electron microscopy of defects in materials : symposium held April 16-18, 1990, San Francisco, California, USA
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
183
発行年:
1990
開始ページ:
135
終了ページ:
140
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990722 [1558990720]
言語:
英語
請求記号:
M23500/183
資料種別:
国際会議録

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