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SUBMICRON p-CHANNEL MOS DEVICES WITH BORON DOPED POLYSILICON GATES FABRICATED BY RAPID THERMAL PROCESSING

著者名:
掲載資料名:
Polysilicon thin films and interfaces
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
182
発行年:
1990
開始ページ:
293
終了ページ:
298
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990715 [1558990712]
言語:
英語
請求記号:
M23500/182
資料種別:
国際会議録

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